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Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3

RS Stock No.: 124-2249Brand: VishayManufacturers Part No.: SUP70040E-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 138.82

₪ 27.765 Each (In a Pack of 5) (ex VAT)

₪ 162.42

₪ 32.485 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3
Select packaging type

₪ 138.82

₪ 27.765 Each (In a Pack of 5) (ex VAT)

₪ 162.42

₪ 32.485 Each (In a Pack of 5) (inc. VAT)

Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 95₪ 27.765₪ 138.82
100 - 245₪ 21.81₪ 109.05
250 - 495₪ 21.69₪ 108.45
500 - 995₪ 21.435₪ 107.18
1000+₪ 18.36₪ 91.80

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.65mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.51mm

Typical Gate Charge @ Vgs

76 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

15.49mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Country of Origin

Taiwan, Province Of China

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more