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Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O

RS Stock No.: 168-7964Brand: ToshibaManufacturers Part No.: TK20J60W,S1VQ(O
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

20mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

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Stock information temporarily unavailable.

₪ 517.50

₪ 20.70 Each (In a Tube of 25) (ex VAT)

₪ 605.48

₪ 24.219 Each (In a Tube of 25) (inc. VAT)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O

25

Available in multiples of 25
25₪ 517.50
50₪ 1,035.00
75₪ 1,552.50
100₪ 2,070.00
125₪ 2,587.50
150₪ 3,105.00
175₪ 3,622.50
200₪ 4,140.00
225₪ 4,657.50
250₪ 5,175.00
275₪ 5,692.50
300₪ 6,210.00
325₪ 6,727.50
350₪ 7,245.00
375₪ 7,762.50

₪ 517.50

₪ 20.70 Each (In a Tube of 25) (ex VAT)

₪ 605.48

₪ 24.219 Each (In a Tube of 25) (inc. VAT)

Toshiba TK N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-3PN TK20J60W,S1VQ(O
Stock information temporarily unavailable.

25

Available in multiples of 25
25₪ 517.50
50₪ 1,035.00
75₪ 1,552.50
100₪ 2,070.00
125₪ 2,587.50
150₪ 3,105.00
175₪ 3,622.50
200₪ 4,140.00
225₪ 4,657.50
250₪ 5,175.00
275₪ 5,692.50
300₪ 6,210.00
325₪ 6,727.50
350₪ 7,245.00
375₪ 7,762.50

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

TK

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

155 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.5mm

Number of Elements per Chip

1

Length

15.5mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Height

20mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more