N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

RS Stock No.: 125-0541Brand: ToshibaManufacturers Part No.: TK16E60W5,S1VX(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₪ 10.208

Each (In a Pack of 5) (ex VAT)

₪ 11.943

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

5

Available in multiples of 5
5₪ 51.04
10₪ 102.08
15₪ 153.12
20₪ 204.17
25₪ 156.62
30₪ 187.94
35₪ 219.27
40₪ 250.59
45₪ 281.92
50₪ 291.57
55₪ 320.72
60₪ 349.88
65₪ 379.04
70₪ 408.19
75₪ 437.35

₪ 10.208

Each (In a Pack of 5) (ex VAT)

₪ 11.943

Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S
Stock information temporarily unavailable.

5

Available in multiples of 5
5₪ 51.04
10₪ 102.08
15₪ 153.12
20₪ 204.17
25₪ 156.62
30₪ 187.94
35₪ 219.27
40₪ 250.59
45₪ 281.92
50₪ 291.57
55₪ 320.72
60₪ 349.88
65₪ 379.04
70₪ 408.19
75₪ 437.35

Buy in bulk

quantityUnit pricePer Pack
5 - 20₪ 10.208₪ 51.04
25 - 45₪ 6.265₪ 31.32
50+₪ 5.831₪ 29.16

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more