Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
5.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
₪ 143.40
₪ 7.17 Each (In a Pack of 20) (ex VAT)
₪ 167.78
₪ 8.389 Each (In a Pack of 20) (inc. VAT)
20
₪ 143.40
₪ 7.17 Each (In a Pack of 20) (ex VAT)
₪ 167.78
₪ 8.389 Each (In a Pack of 20) (inc. VAT)
20
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
20 - 40 | ₪ 7.17 | ₪ 143.40 |
60 - 100 | ₪ 6.375 | ₪ 127.50 |
120 - 220 | ₪ 4.695 | ₪ 93.90 |
240 - 460 | ₪ 4.605 | ₪ 92.10 |
480+ | ₪ 4.275 | ₪ 85.50 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
60 V
Series
2SK
Package Type
PW Mold2
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
20 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
2.3mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
5.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
Japan
Product details