Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Package Type
ITO-220S
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
260 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
32.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Height
15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
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₪ 15.285
Each (On a Reel of 1000) (ex VAT)
₪ 17.883
Each (On a Reel of 1000) (inc VAT)
1000
₪ 15.285
Each (On a Reel of 1000) (ex VAT)
₪ 17.883
Each (On a Reel of 1000) (inc VAT)
1000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
1000 - 2000 | ₪ 15.285 | ₪ 15,284.51 |
3000 - 4000 | ₪ 14.32 | ₪ 14,319.62 |
5000 - 9000 | ₪ 13.509 | ₪ 13,508.54 |
10000+ | ₪ 12.963 | ₪ 12,963.17 |
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
600 V
Package Type
ITO-220S
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
260 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
32.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10mm
Typical Gate Charge @ Vgs
30 nC @ 10 V
Height
15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V