Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1V
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₪ 2.559
Each (On a Reel of 2500) (ex VAT)
₪ 2.994
Each (On a Reel of 2500) (inc VAT)
2500
₪ 2.559
Each (On a Reel of 2500) (ex VAT)
₪ 2.994
Each (On a Reel of 2500) (inc VAT)
2500
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
2500 - 2500 | ₪ 2.559 | ₪ 6,397.68 |
5000 - 7500 | ₪ 2.391 | ₪ 5,978.16 |
10000+ | ₪ 2.265 | ₪ 5,663.52 |
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
28 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
53 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1V