Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
19 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
₪ 126.08
₪ 25.215 Each (In a Pack of 5) (ex VAT)
₪ 147.51
₪ 29.502 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 126.08
₪ 25.215 Each (In a Pack of 5) (ex VAT)
₪ 147.51
₪ 29.502 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₪ 25.215 | ₪ 126.08 |
50 - 95 | ₪ 20.25 | ₪ 101.25 |
100+ | ₪ 16.56 | ₪ 82.80 |
Technical documents
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
19 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Product details