N-Channel MOSFET, 50 A, 100 V, 3-Pin DPAK STMicroelectronics STD40NF10

RS Stock No.: 165-6677Brand: STMicroelectronicsManufacturers Part No.: STD40NF10
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

STripFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Width

6.2mm

Number of Elements per Chip

1

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

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₪ 18,750.00

₪ 7.50 Each (On a Reel of 2500) (ex VAT)

₪ 21,937.50

₪ 8.775 Each (On a Reel of 2500) (inc. VAT)

N-Channel MOSFET, 50 A, 100 V, 3-Pin DPAK STMicroelectronics STD40NF10

₪ 18,750.00

₪ 7.50 Each (On a Reel of 2500) (ex VAT)

₪ 21,937.50

₪ 8.775 Each (On a Reel of 2500) (inc. VAT)

N-Channel MOSFET, 50 A, 100 V, 3-Pin DPAK STMicroelectronics STD40NF10
Stock information temporarily unavailable.

Buy in bulk

quantityUnit pricePer Reel
2500 - 2500₪ 7.50₪ 18,750.00
5000 - 10000₪ 7.005₪ 17,512.50
12500 - 22500₪ 6.555₪ 16,387.50
25000 - 60000₪ 6.12₪ 15,300.00
62500+₪ 5.73₪ 14,325.00

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Series

STripFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

46.5 nC @ 10 V

Width

6.2mm

Number of Elements per Chip

1

Height

2.4mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more