Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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Please check again later.
₪ 2.727
Each (Supplied as a Tape) (ex VAT)
₪ 3.191
Each (Supplied as a Tape) (inc VAT)
25
₪ 2.727
Each (Supplied as a Tape) (ex VAT)
₪ 3.191
Each (Supplied as a Tape) (inc VAT)
25
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
25 - 25 | ₪ 2.727 | ₪ 68.17 |
50 - 100 | ₪ 1.972 | ₪ 49.29 |
125 - 225 | ₪ 1.314 | ₪ 32.86 |
250 - 475 | ₪ 1.203 | ₪ 30.07 |
500+ | ₪ 1.203 | ₪ 30.07 |
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
10.1 nC @ 10 V, 4.8 nC @ 4.5 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.9mm
Product details