Nexperia N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 BSH103,215

RS Stock No.: 103-7554Brand: NexperiaManufacturers Part No.: BSH103,215
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

₪ 2,430.00

₪ 0.81 Each (On a Reel of 3000) (ex VAT)

₪ 2,843.10

₪ 0.948 Each (On a Reel of 3000) (inc. VAT)

Nexperia N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 BSH103,215

₪ 2,430.00

₪ 0.81 Each (On a Reel of 3000) (ex VAT)

₪ 2,843.10

₪ 0.948 Each (On a Reel of 3000) (inc. VAT)

Nexperia N-Channel MOSFET, 850 mA, 30 V, 3-Pin SOT-23 BSH103,215
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
3000 - 3000₪ 0.81₪ 2,430.00
6000 - 12000₪ 0.765₪ 2,295.00
15000 - 27000₪ 0.735₪ 2,205.00
30000 - 57000₪ 0.72₪ 2,160.00
60000+₪ 0.69₪ 2,070.00

Ideate. Create. Collaborate

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No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

850 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more