Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
2.1 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
₪ 2,430.00
₪ 0.81 Each (On a Reel of 3000) (ex VAT)
₪ 2,843.10
₪ 0.948 Each (On a Reel of 3000) (inc. VAT)
3000
₪ 2,430.00
₪ 0.81 Each (On a Reel of 3000) (ex VAT)
₪ 2,843.10
₪ 0.948 Each (On a Reel of 3000) (inc. VAT)
3000
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | ₪ 0.81 | ₪ 2,430.00 |
6000 - 12000 | ₪ 0.765 | ₪ 2,295.00 |
15000 - 27000 | ₪ 0.735 | ₪ 2,205.00 |
30000 - 57000 | ₪ 0.72 | ₪ 2,160.00 |
60000+ | ₪ 0.69 | ₪ 2,070.00 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3mm
Typical Gate Charge @ Vgs
2.1 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details