Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
PRICED TO CLEAR
Yes
Height
2.39mm
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
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₪ 4.209
Each (In a Tube of 50) (ex VAT)
₪ 4.925
Each (In a Tube of 50) (inc VAT)
50
₪ 4.209
Each (In a Tube of 50) (ex VAT)
₪ 4.925
Each (In a Tube of 50) (inc VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 200 | ₪ 4.209 | ₪ 210.46 |
250 - 950 | ₪ 3.636 | ₪ 181.79 |
1000 - 2450 | ₪ 3.258 | ₪ 162.91 |
2500+ | ₪ 3.16 | ₪ 158.02 |
Technical documents
Specifications
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
3.4 A
Maximum Drain Source Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.6 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
9 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
PRICED TO CLEAR
Yes
Height
2.39mm
Country of Origin
China
Product details
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.