N-Channel MOSFET, 240 A, 60 V, 7-Pin D2PAK-7 Infineon IRFS7530TRL7PP
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
9.65mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
236 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 65.22
₪ 32.61 Each (In a Pack of 2) (ex VAT)
₪ 76.31
₪ 38.154 Each (In a Pack of 2) (inc. VAT)
Standard
2
₪ 65.22
₪ 32.61 Each (In a Pack of 2) (ex VAT)
₪ 76.31
₪ 38.154 Each (In a Pack of 2) (inc. VAT)
Standard
2
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 98 | ₪ 32.61 | ₪ 65.22 |
| 100 - 248 | ₪ 24.39 | ₪ 48.78 |
| 250 - 398 | ₪ 23.445 | ₪ 46.89 |
| 400 - 798 | ₪ 21.03 | ₪ 42.06 |
| 800+ | ₪ 18.315 | ₪ 36.63 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
240 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
9.65mm
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
236 nC @ 10 V
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products