Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Series
IRF3710ZS
Minimum Operating Temperature
-55 °C
Height
4.83mm
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₪ 6.517
Each (On a Reel of 800) (ex VAT)
₪ 7.625
Each (On a Reel of 800) (inc VAT)
800
₪ 6.517
Each (On a Reel of 800) (ex VAT)
₪ 7.625
Each (On a Reel of 800) (inc VAT)
800
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
800 - 800 | ₪ 6.517 | ₪ 5,213.24 |
1600 - 1600 | ₪ 6.293 | ₪ 5,034.24 |
2400+ | ₪ 6.055 | ₪ 4,844.06 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Width
9.65mm
Number of Elements per Chip
1
Forward Diode Voltage
1.3V
Series
IRF3710ZS
Minimum Operating Temperature
-55 °C
Height
4.83mm