Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Forward Diode Voltage
1.24V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 0.741
Each (Supplied on a Reel) (ex VAT)
₪ 0.867
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
₪ 0.741
Each (Supplied on a Reel) (ex VAT)
₪ 0.867
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
250 - 250 | ₪ 0.741 | ₪ 185.29 |
500 - 1000 | ₪ 0.643 | ₪ 160.82 |
1250 - 2250 | ₪ 0.434 | ₪ 108.38 |
2500 - 4750 | ₪ 0.42 | ₪ 104.88 |
5000+ | ₪ 0.336 | ₪ 83.90 |
Technical documents
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.3mm
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Number of Elements per Chip
1
Forward Diode Voltage
1.24V
Height
0.9mm
Minimum Operating Temperature
-55 °C
Product details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.