N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON Infineon BSC070N10NS3GATMA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 3
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
5.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 9.383
Each (Supplied on a Reel) (ex VAT)
₪ 10.978
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
₪ 9.383
Each (Supplied on a Reel) (ex VAT)
₪ 10.978
Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
Buy in bulk
| quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 240 | ₪ 9.383 | ₪ 93.83 |
| 250 - 490 | ₪ 8.306 | ₪ 83.06 |
| 500 - 1240 | ₪ 7.398 | ₪ 73.98 |
| 1250+ | ₪ 5.929 | ₪ 59.29 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
OptiMOS™ 3
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
156 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
5.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1.1mm
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products