Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC040N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
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₪ 15.312
Each (In a Pack of 10) (ex VAT)
₪ 17.915
Each (In a Pack of 10) (inc VAT)
10
₪ 15.312
Each (In a Pack of 10) (ex VAT)
₪ 17.915
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 15.312 | ₪ 153.12 |
100 - 490 | ₪ 12.53 | ₪ 125.30 |
500 - 990 | ₪ 11.201 | ₪ 112.01 |
1000 - 2490 | ₪ 9.369 | ₪ 93.69 |
2500+ | ₪ 8.922 | ₪ 89.22 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
5.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.8V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Typical Gate Charge @ Vgs
58 nC @ 10 V
Width
6.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.49mm
Height
1.1mm
Series
BSC040N10NS5
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V