Disruption To Air Freight Service

Due to the ongoing situation in the region air freight services are being restricted and thus delivery times are being affected. For further information please contact sales@rsisrael.co.il

Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3

RS Stock No.: 818-1390Brand: VishayManufacturers Part No.: SI7288DP-T1-GE3
brand-logo
View all in MOSFETs

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

1.07mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Stock information temporarily unavailable.

₪ 114.00

₪ 11.40 Each (In a Pack of 10) (ex VAT)

₪ 133.38

₪ 13.338 Each (In a Pack of 10) (inc. VAT)

Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10₪ 114.00
20₪ 228.00
30₪ 286.20
40₪ 381.60
50₪ 477.00
60₪ 572.40
70₪ 667.80
80₪ 763.20
90₪ 858.60
100₪ 954.00
110₪ 1,049.40
120₪ 1,144.80
130₪ 1,240.20
140₪ 1,335.60
150₪ 1,262.25

₪ 114.00

₪ 11.40 Each (In a Pack of 10) (ex VAT)

₪ 133.38

₪ 13.338 Each (In a Pack of 10) (inc. VAT)

Vishay Dual N-Channel MOSFET, 20 A, 40 V, 8-Pin PowerPAK SO-8 SI7288DP-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10₪ 114.00
20₪ 228.00
30₪ 286.20
40₪ 381.60
50₪ 477.00
60₪ 572.40
70₪ 667.80
80₪ 763.20
90₪ 858.60
100₪ 954.00
110₪ 1,049.40
120₪ 1,144.80
130₪ 1,240.20
140₪ 1,335.60
150₪ 1,262.25

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
10 - 20₪ 11.40₪ 114.00
30 - 140₪ 9.54₪ 95.40
150 - 740₪ 8.415₪ 84.15
750 - 1490₪ 7.185₪ 71.85
1500+₪ 6.54₪ 65.40

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

22 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

15.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Length

5.99mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

1.07mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more