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Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3

RS Stock No.: 818-1380Brand: VishayManufacturers Part No.: SI7121DN-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

27.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 99.00

₪ 9.90 Each (In a Pack of 10) (ex VAT)

₪ 115.83

₪ 11.583 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
Select packaging type

₪ 99.00

₪ 9.90 Each (In a Pack of 10) (ex VAT)

₪ 115.83

₪ 11.583 Each (In a Pack of 10) (inc. VAT)

Vishay P-Channel MOSFET, 9.6 A, 30 V, 8-Pin PowerPAK 1212-8 SI7121DN-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
10 - 290₪ 9.90₪ 99.00
300 - 590₪ 7.425₪ 74.25
600 - 1490₪ 6.48₪ 64.80
1500 - 2990₪ 5.19₪ 51.90
3000+₪ 4.905₪ 49.05

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.6 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

27.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

3.15mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.15mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.07mm

Minimum Operating Temperature

-50 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more