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Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3

RS Stock No.: 818-1312Brand: VishayManufacturers Part No.: SI5419DU-T1-GE3
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Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.08mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 32.40

₪ 1.62 Each (In a Pack of 20) (ex VAT)

₪ 37.91

₪ 1.895 Each (In a Pack of 20) (inc. VAT)

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
Select packaging type

₪ 32.40

₪ 1.62 Each (In a Pack of 20) (ex VAT)

₪ 37.91

₪ 1.895 Each (In a Pack of 20) (inc. VAT)

Vishay P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET SI5419DU-T1-GE3
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

9.9 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.98mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3.08mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.85mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more