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Vishay N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-223 IRFL110TRPBF

RS Stock No.: 177-7598Brand: VishayManufacturers Part No.: IRFL110TRPBF
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Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.7mm

Length

6.7mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.8mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

₪ 8,362.50

₪ 3.345 Each (On a Reel of 2500) (ex VAT)

₪ 9,784.12

₪ 3.914 Each (On a Reel of 2500) (inc. VAT)

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-223 IRFL110TRPBF

₪ 8,362.50

₪ 3.345 Each (On a Reel of 2500) (ex VAT)

₪ 9,784.12

₪ 3.914 Each (On a Reel of 2500) (inc. VAT)

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-223 IRFL110TRPBF
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

3.7mm

Length

6.7mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.8mm

Product details

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more