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Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

RS Stock No.: 178-3722Brand: Vishay SiliconixManufacturers Part No.: SQJA76EP-T1_GE3
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

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Stock information temporarily unavailable.

₪ 20,115.00

₪ 6.705 Each (On a Reel of 3000) (ex VAT)

₪ 23,534.55

₪ 7.845 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3

₪ 20,115.00

₪ 6.705 Each (On a Reel of 3000) (ex VAT)

₪ 23,534.55

₪ 7.845 Each (On a Reel of 3000) (inc. VAT)

Vishay Siliconix TrenchFET N-Channel MOSFET, 75 A, 40 V, 4-Pin PowerPAK SO-8L SQJA76EP-T1_GE3
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

TrenchFET

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

66 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

5.99mm

Typical Gate Charge @ Vgs

66 nC @ 10 V

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more