Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
₪ 57.60
₪ 11.52 Each (In a Pack of 5) (ex VAT)
₪ 67.39
₪ 13.478 Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 57.60
₪ 11.52 Each (In a Pack of 5) (ex VAT)
₪ 67.39
₪ 13.478 Each (In a Pack of 5) (inc. VAT)
Standard
5
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | ₪ 11.52 | ₪ 57.60 |
50 - 120 | ₪ 10.305 | ₪ 51.52 |
125 - 245 | ₪ 9.15 | ₪ 45.75 |
250 - 495 | ₪ 8.70 | ₪ 43.50 |
500+ | ₪ 8.34 | ₪ 41.70 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
49 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Country of Origin
China
Product details