Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
China
Product details
MOSFET N-Channel, TK3x Series, Toshiba
MOSFET Transistors, Toshiba
₪ 41.24
₪ 41.24 Each (ex VAT)
₪ 48.25
₪ 48.25 Each (inc. VAT)
1
₪ 41.24
₪ 41.24 Each (ex VAT)
₪ 48.25
₪ 48.25 Each (inc. VAT)
1
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Please check again later.
quantity | Unit price |
---|---|
1 - 9 | ₪ 41.24 |
10 - 49 | ₪ 34.44 |
50 - 99 | ₪ 31.98 |
100 - 199 | ₪ 30.27 |
200+ | ₪ 28.50 |
Technical documents
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
39 A
Maximum Drain Source Voltage
600 V
Series
TK
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Maximum Power Dissipation
270 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.02mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.94mm
Typical Gate Charge @ Vgs
110 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
20.95mm
Country of Origin
China
Product details