Texas Instruments NexFET P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T

RS Stock No.: 133-0156Brand: Texas InstrumentsManufacturers Part No.: CSD25404Q3T
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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

3.4mm

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

₪ 56.85

₪ 11.37 Each (In a Pack of 5) (ex VAT)

₪ 66.51

₪ 13.303 Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Select packaging type

₪ 56.85

₪ 11.37 Each (In a Pack of 5) (ex VAT)

₪ 66.51

₪ 13.303 Each (In a Pack of 5) (inc. VAT)

Texas Instruments NexFET P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP CSD25404Q3T
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
5 - 10₪ 11.37₪ 56.85
15 - 45₪ 9.21₪ 46.05
50 - 245₪ 8.25₪ 41.25
250 - 495₪ 7.305₪ 36.52
500+₪ 6.555₪ 32.78

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Technical documents

Specifications

Channel Type

P

Maximum Continuous Drain Current

104 A

Maximum Drain Source Voltage

20 V

Series

NexFET

Package Type

VSON-CLIP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.15V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

3.4mm

Number of Elements per Chip

1

Length

3.4mm

Typical Gate Charge @ Vgs

10.8 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Product details

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more