Technical documents
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.5V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
38.7 W
Package Type
ITO-220
Length
10mm
Height
15mm
Maximum Drain Source Resistance
3 Ω
Typical Gate Charge @ Vgs
20 nC @ 10 V
Brand
Taiwan SemiconductorStock information temporarily unavailable.
Please check again later.
₪ 11.411
Each (On a Reel of 1000) (ex VAT)
₪ 13.351
Each (On a Reel of 1000) (inc VAT)
1000
₪ 11.411
Each (On a Reel of 1000) (ex VAT)
₪ 13.351
Each (On a Reel of 1000) (inc VAT)
1000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
1000 - 2000 | ₪ 11.411 | ₪ 11,410.94 |
3000 - 4000 | ₪ 10.698 | ₪ 10,697.76 |
5000 - 9000 | ₪ 10.082 | ₪ 10,082.46 |
10000+ | ₪ 9.957 | ₪ 9,956.61 |
Technical documents
Specifications
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.5V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
38.7 W
Package Type
ITO-220
Length
10mm
Height
15mm
Maximum Drain Source Resistance
3 Ω
Typical Gate Charge @ Vgs
20 nC @ 10 V
Brand
Taiwan Semiconductor