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N-Channel MOSFET Transistor, 11 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP11NM60FP

RS Stock No.: 761-2896PBrand: STMicroelectronicsManufacturers Part No.: STP11NM60FP
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

35 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Width

4.6mm

Minimum Operating Temperature

-65 °C

Height

16.4mm

Product details

MOSFETs - N-Channel

The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.

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P.O.A.

N-Channel MOSFET Transistor, 11 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP11NM60FP
Select packaging type

P.O.A.

N-Channel MOSFET Transistor, 11 A, 600 V, 3-Pin TO-220FP STMicroelectronics STP11NM60FP
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

450 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

35 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Width

4.6mm

Minimum Operating Temperature

-65 °C

Height

16.4mm

Product details

MOSFETs - N-Channel

The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in