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STMicroelectronics N-Channel MOSFET, 20 A, 125 V, 4-Pin M174 SD2931-10W

RS Stock No.: 917-3356Brand: STMicroelectronicsManufacturers Part No.: SD2931-10W
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Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

125 V

Package Type

M174

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation

389 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

24.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

26.67mm

Maximum Operating Temperature

+200 °C

Height

4.11mm

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 621.02

₪ 621.02 Each (ex VAT)

₪ 726.59

₪ 726.59 Each (inc. VAT)

STMicroelectronics N-Channel MOSFET, 20 A, 125 V, 4-Pin M174 SD2931-10W
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₪ 621.02
2₪ 1,242.03
3₪ 1,863.04
4₪ 2,484.06
5₪ 2,837.55
6₪ 3,405.06
7₪ 3,972.57
8₪ 4,540.08
9₪ 5,107.59
10₪ 5,505.60
11₪ 6,056.16
12₪ 6,606.72
13₪ 7,157.28
14₪ 7,707.84
15₪ 8,258.40

₪ 621.02

₪ 621.02 Each (ex VAT)

₪ 726.59

₪ 726.59 Each (inc. VAT)

STMicroelectronics N-Channel MOSFET, 20 A, 125 V, 4-Pin M174 SD2931-10W
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1₪ 621.02
2₪ 1,242.03
3₪ 1,863.04
4₪ 2,484.06
5₪ 2,837.55
6₪ 3,405.06
7₪ 3,972.57
8₪ 4,540.08
9₪ 5,107.59
10₪ 5,505.60
11₪ 6,056.16
12₪ 6,606.72
13₪ 7,157.28
14₪ 7,707.84
15₪ 8,258.40

Stock information temporarily unavailable.

Please check again later.

quantityUnit price
1 - 4₪ 621.02
5 - 9₪ 567.51
10 - 24₪ 550.56
25+₪ 539.26

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

125 V

Package Type

M174

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Maximum Power Dissipation

389 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

24.89mm

Transistor Material

Si

Number of Elements per Chip

1

Length

26.67mm

Maximum Operating Temperature

+200 °C

Height

4.11mm

Product details

RF MOSFET Transistors, STMicroelectronics

The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more