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STMicroelectronics STripFET N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 IRF630

RS Stock No.: 486-0171Brand: STMicroelectronicsManufacturers Part No.: IRF630
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.6mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

₪ 45.98

₪ 9.195 Each (In a Pack of 5) (ex VAT)

₪ 53.80

₪ 10.758 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 IRF630
Select packaging type

₪ 45.98

₪ 9.195 Each (In a Pack of 5) (ex VAT)

₪ 53.80

₪ 10.758 Each (In a Pack of 5) (inc. VAT)

STMicroelectronics STripFET N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 IRF630
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

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quantityUnit pricePer Pack
5 - 20₪ 9.195₪ 45.98
25 - 95₪ 7.20₪ 36.00
100 - 245₪ 5.58₪ 27.90
250 - 495₪ 5.34₪ 26.70
500+₪ 5.055₪ 25.28

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.6mm

Typical Gate Charge @ Vgs

31 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

9.15mm

Minimum Operating Temperature

-65 °C

Product details

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in