Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
₪ 79.12
₪ 3.165 Each (In a Pack of 25) (ex VAT)
₪ 92.57
₪ 3.703 Each (In a Pack of 25) (inc. VAT)
Standard
25
₪ 79.12
₪ 3.165 Each (In a Pack of 25) (ex VAT)
₪ 92.57
₪ 3.703 Each (In a Pack of 25) (inc. VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 50 | ₪ 3.165 | ₪ 79.12 |
75 - 125 | ₪ 2.205 | ₪ 55.12 |
150 - 275 | ₪ 1.41 | ₪ 35.25 |
300 - 575 | ₪ 1.365 | ₪ 34.12 |
600+ | ₪ 1.35 | ₪ 33.75 |
Technical documents
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
880 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
350 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Length
2.2mm
Typical Gate Charge @ Vgs
2.2 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details