onsemi P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD2955T4G

RS Stock No.: 463-038PBrand: onsemiManufacturers Part No.: NTD2955T4G
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Stock information temporarily unavailable.

₪ 114.90

₪ 5.745 Each (Supplied on a Reel) (ex VAT)

₪ 134.43

₪ 6.722 Each (Supplied on a Reel) (inc. VAT)

onsemi P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD2955T4G
Select packaging type

₪ 114.90

₪ 5.745 Each (Supplied on a Reel) (ex VAT)

₪ 134.43

₪ 6.722 Each (Supplied on a Reel) (inc. VAT)

onsemi P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK NTD2955T4G
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
20 - 40₪ 5.745₪ 57.45
50 - 90₪ 5.55₪ 55.50
100 - 190₪ 4.035₪ 40.35
200+₪ 3.885₪ 38.85

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.73mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

6.22mm

Height

2.38mm

Minimum Operating Temperature

-55 °C

Product details

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more