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N-Channel MOSFET, 8 A, 160 V, 3-Pin TO-247 Magnatec BUZ900P

RS Stock No.: 841-047Brand: MagnatecManufacturers Part No.: BUZ900P
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Technical documents

Specifications

Brand

Magnatec

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

160 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-14 V, +14 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.26mm

Width

2.49mm

Transistor Material

Si

Height

21.46mm

Product details

N-Channel MOSFET Transistors, Semelab

MOSFET Transistors, Semelab

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P.O.A.

N-Channel MOSFET, 8 A, 160 V, 3-Pin TO-247 Magnatec BUZ900P
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Available in multiples of 1.

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1

Available in multiples of 1
1P.O.A.
2P.O.A.
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7P.O.A.
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15P.O.A.

P.O.A.

N-Channel MOSFET, 8 A, 160 V, 3-Pin TO-247 Magnatec BUZ900P
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

Magnatec

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

160 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-14 V, +14 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.26mm

Width

2.49mm

Transistor Material

Si

Height

21.46mm

Product details

N-Channel MOSFET Transistors, Semelab

MOSFET Transistors, Semelab

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more