Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 5.4 A, 100 V, 8-Pin SO-8 IRF7490TRPBF
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.039 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
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P.O.A.
Each (On a Reel of 4000) (ex VAT)
4000
P.O.A.
Each (On a Reel of 4000) (ex VAT)
4000
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Ideate. Create. Collaborate
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Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.039 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products