Infineon DirectFET, HEXFET N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.05mm
Length
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.3V
Height
0.5mm
Country of Origin
China
Product details
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 69,192.00
₪ 14.415 Each (On a Reel of 4800) (ex VAT)
₪ 80,954.64
₪ 16.866 Each (On a Reel of 4800) (inc. VAT)
4800
₪ 69,192.00
₪ 14.415 Each (On a Reel of 4800) (ex VAT)
₪ 80,954.64
₪ 16.866 Each (On a Reel of 4800) (inc. VAT)
4800
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Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
86 A
Maximum Drain Source Voltage
60 V
Series
DirectFET, HEXFET
Package Type
DirectFET ISOMETRIC
Mounting Type
Surface Mount
Maximum Drain Source Resistance
7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.9V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
89 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.05mm
Length
6.35mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
1.3V
Height
0.5mm
Country of Origin
China
Product details
DirectFET® Power MOSFET, Infineon
The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.
Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products