Infineon OptiMOS™ 3 N-Channel MOSFET, 98 A, 120 V, 8-Pin TDSON BSC077N12NS3GATMA1
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
98 A
Maximum Drain Source Voltage
120 V
Package Type
TDSON
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
5.35mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
66 nC @ 10 V
Width
6.1mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 694.50
₪ 13.89 Each (Supplied on a Reel) (ex VAT)
₪ 812.56
₪ 16.25 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
₪ 694.50
₪ 13.89 Each (Supplied on a Reel) (ex VAT)
₪ 812.56
₪ 16.25 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 50 - 249 | ₪ 13.89 |
| 250 - 1249 | ₪ 13.50 |
| 1250 - 2499 | ₪ 12.12 |
| 2500+ | ₪ 12.04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
98 A
Maximum Drain Source Voltage
120 V
Package Type
TDSON
Series
OptiMOS™ 3
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
139 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
5.35mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
66 nC @ 10 V
Width
6.1mm
Transistor Material
Si
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products