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Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7

RS Stock No.: 921-1048Brand: DiodesZetexManufacturers Part No.: DMN10H220L-7
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Stock information temporarily unavailable.

₪ 85.50

₪ 2.85 Each (In a Pack of 30) (ex VAT)

₪ 100.04

₪ 3.334 Each (In a Pack of 30) (inc. VAT)

Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7
Select packaging type

₪ 85.50

₪ 2.85 Each (In a Pack of 30) (ex VAT)

₪ 100.04

₪ 3.334 Each (In a Pack of 30) (inc. VAT)

Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Pack
30 - 120₪ 2.85₪ 85.50
150 - 420₪ 1.965₪ 58.95
450 - 870₪ 1.89₪ 56.70
900 - 2970₪ 1.785₪ 53.55
3000+₪ 1.515₪ 45.45

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Product details

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in