Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
₪ 5.174
Each (In a Pack of 5) (ex VAT)
₪ 6.054
Each (In a Pack of 5) (inc. VAT)
Standard
5
₪ 5.174
Each (In a Pack of 5) (ex VAT)
₪ 6.054
Each (In a Pack of 5) (inc. VAT)
Standard
5
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
1.15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.8V
Maximum Power Dissipation
104 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+20 V
Width
5.26mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.25mm
Typical Gate Charge @ Vgs
102 nC @ 10 V
Height
1.12mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Product details