Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
₪ 5.328
Each (Supplied on a Reel) (ex VAT)
₪ 6.234
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
20
₪ 5.328
Each (Supplied on a Reel) (ex VAT)
₪ 6.234
Each (Supplied on a Reel) (inc VAT)
Production pack (Reel)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 80 | ₪ 5.328 | ₪ 106.56 |
100 - 480 | ₪ 3.86 | ₪ 77.19 |
500 - 1480 | ₪ 3.104 | ₪ 62.09 |
1500+ | ₪ 2.741 | ₪ 54.82 |
Technical documents
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
7.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
49 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
4.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1.55mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details