Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Please check again later.
₪ 2.741
Each (In a Pack of 50) (ex VAT)
₪ 3.207
Each (In a Pack of 50) (inc. VAT)
Standard
50
₪ 2.741
Each (In a Pack of 50) (ex VAT)
₪ 3.207
Each (In a Pack of 50) (inc. VAT)
Standard
50
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
50 - 250 | ₪ 2.741 | ₪ 137.04 |
300 - 550 | ₪ 2.00 | ₪ 99.99 |
600 - 1450 | ₪ 1.608 | ₪ 80.41 |
1500 - 2950 | ₪ 1.301 | ₪ 65.03 |
3000+ | ₪ 1.273 | ₪ 63.63 |
Technical documents
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Product details