N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

RS Stock No.: 125-0563Brand: ToshibaManufacturers Part No.: TK31E60X,S1X(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

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₪ 60.75

₪ 30.375 Each (In a Pack of 2) (ex VAT)

₪ 71.08

₪ 35.539 Each (In a Pack of 2) (inc. VAT)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S

2

Available in multiples of 2
2₪ 60.75
4₪ 121.50
6₪ 182.25
8₪ 243.00
10₪ 184.80
12₪ 221.76
14₪ 258.72
16₪ 295.68
18₪ 332.64
20₪ 344.40
22₪ 378.84
24₪ 413.28
26₪ 447.72
28₪ 482.16
30₪ 516.60

₪ 60.75

₪ 30.375 Each (In a Pack of 2) (ex VAT)

₪ 71.08

₪ 35.539 Each (In a Pack of 2) (inc. VAT)

N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 Toshiba TK31E60X,S1X(S
Stock information temporarily unavailable.

2

Available in multiples of 2
2₪ 60.75
4₪ 121.50
6₪ 182.25
8₪ 243.00
10₪ 184.80
12₪ 221.76
14₪ 258.72
16₪ 295.68
18₪ 332.64
20₪ 344.40
22₪ 378.84
24₪ 413.28
26₪ 447.72
28₪ 482.16
30₪ 516.60

Buy in bulk

quantityUnit pricePer Pack
2 - 8₪ 30.375₪ 60.75
10 - 18₪ 18.48₪ 36.96
20+₪ 17.22₪ 34.44

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Width

4.45mm

Number of Elements per Chip

1

Forward Diode Voltage

1.7V

Height

15.1mm

Country of Origin

Japan

Product details

MOSFET N-Channel, TK3x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more