N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S

RS Stock No.: 133-2797Brand: ToshibaManufacturers Part No.: TK14G65W,RQ(S
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

8.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.35mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

4.46mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

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₪ 88.95

₪ 17.79 Each (In a Pack of 5) (ex VAT)

₪ 104.07

₪ 20.814 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S

5

Available in multiples of 5
5₪ 88.95
10₪ 177.90
15₪ 266.85
20₪ 355.80
25₪ 406.12
30₪ 487.35
35₪ 568.58
40₪ 649.80
45₪ 731.02
50₪ 786.75
55₪ 865.42
60₪ 944.10
65₪ 1,022.78
70₪ 1,101.45
75₪ 1,180.12

₪ 88.95

₪ 17.79 Each (In a Pack of 5) (ex VAT)

₪ 104.07

₪ 20.814 Each (In a Pack of 5) (inc. VAT)

N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S
Stock information temporarily unavailable.

5

Available in multiples of 5
5₪ 88.95
10₪ 177.90
15₪ 266.85
20₪ 355.80
25₪ 406.12
30₪ 487.35
35₪ 568.58
40₪ 649.80
45₪ 731.02
50₪ 786.75
55₪ 865.42
60₪ 944.10
65₪ 1,022.78
70₪ 1,101.45
75₪ 1,180.12

Buy in bulk

quantityUnit pricePer Pack
5 - 20₪ 17.79₪ 88.95
25 - 45₪ 16.245₪ 81.22
50 - 245₪ 15.735₪ 78.68
250 - 495₪ 15.33₪ 76.65
500+₪ 15.21₪ 76.05

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical documents

Specifications

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

8.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.35mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

4.46mm

Forward Diode Voltage

1.7V

Country of Origin

Japan

Product details

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more