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Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A

RS Stock No.: 168-4377Brand: Texas InstrumentsManufacturers Part No.: CSD18563Q5A
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Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5.8mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

Malaysia

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Stock information temporarily unavailable.

₪ 24,637.50

₪ 9.855 Each (On a Reel of 2500) (ex VAT)

₪ 28,825.88

₪ 11.53 Each (On a Reel of 2500) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A

₪ 24,637.50

₪ 9.855 Each (On a Reel of 2500) (ex VAT)

₪ 28,825.88

₪ 11.53 Each (On a Reel of 2500) (inc. VAT)

Texas Instruments NexFET N-Channel MOSFET, 100 A, 60 V, 8-Pin VSONP CSD18563Q5A
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

60 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.7V

Maximum Power Dissipation

3.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

5mm

Length

5.8mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

Malaysia

Product details

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more