Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
11.1 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Width
5.8mm
Forward Diode Voltage
1V
Height
2.3mm
Stock information temporarily unavailable.
Please check again later.
₪ 2.461
Each (On a Reel of 2500) (ex VAT)
₪ 2.879
Each (On a Reel of 2500) (inc VAT)
2500
₪ 2.461
Each (On a Reel of 2500) (ex VAT)
₪ 2.879
Each (On a Reel of 2500) (inc VAT)
2500
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
2500 - 2500 | ₪ 2.461 | ₪ 6,152.96 |
5000 - 7500 | ₪ 2.349 | ₪ 5,873.28 |
10000+ | ₪ 2.209 | ₪ 5,523.68 |
Technical documents
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
11.1 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Width
5.8mm
Forward Diode Voltage
1V
Height
2.3mm