Technical documents
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Width
1.35mm
Number of Elements per Chip
2
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.
MOSFET Transistors, ON Semiconductor
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₪ 2.671
Each (Supplied as a Tape) (ex VAT)
₪ 3.125
Each (Supplied as a Tape) (inc. VAT)
Standard
20
₪ 2.671
Each (Supplied as a Tape) (ex VAT)
₪ 3.125
Each (Supplied as a Tape) (inc. VAT)
Standard
20
Buy in bulk
quantity | Unit price | Per Tape |
---|---|---|
20 - 80 | ₪ 2.671 | ₪ 53.42 |
100+ | ₪ 1.37 | ₪ 27.41 |
Technical documents
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
400 mW
Transistor Configuration
N+P Loadswitch
Maximum Gate Source Voltage
+8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Width
1.35mm
Number of Elements per Chip
2
Transistor Material
Si
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channels into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semis trench technology.