Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.1 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
Stock information temporarily unavailable.
Please check again later.
₪ 0.755
Each (On a Reel of 3000) (ex VAT)
₪ 0.883
Each (On a Reel of 3000) (inc. VAT)
3000
₪ 0.755
Each (On a Reel of 3000) (ex VAT)
₪ 0.883
Each (On a Reel of 3000) (inc. VAT)
3000
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
3000 - 3000 | ₪ 0.755 | ₪ 2,265.41 |
6000 - 12000 | ₪ 0.713 | ₪ 2,139.55 |
15000 - 27000 | ₪ 0.685 | ₪ 2,055.65 |
30000 - 57000 | ₪ 0.671 | ₪ 2,013.70 |
60000+ | ₪ 0.643 | ₪ 1,929.79 |
Technical documents
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
850 mA
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3mm
Typical Gate Charge @ Vgs
2.1 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Height
1mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details