N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

RS Stock No.: 177-5342Brand: IXYSManufacturers Part No.: IXFN210N30P3
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Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

192 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

38.23mm

Typical Gate Charge @ Vgs

268 nC @ 10 V

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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₪ 257.879

Each (In a Tube of 10) (ex VAT)

₪ 301.718

Each (In a Tube of 10) (inc. VAT)

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

10

Available in multiples of 10
10₪ 2,578.79
20₪ 5,157.58
30₪ 7,736.37
40₪ 10,315.16
50₪ 12,893.95
60₪ 15,472.74
70₪ 18,051.53
80₪ 20,630.32
90₪ 23,209.10
100₪ 25,787.89
110₪ 28,366.68
120₪ 30,945.47
130₪ 33,524.26
140₪ 36,103.05
150₪ 38,681.84

₪ 257.879

Each (In a Tube of 10) (ex VAT)

₪ 301.718

Each (In a Tube of 10) (inc. VAT)

N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3
Stock information temporarily unavailable.

10

Available in multiples of 10
10₪ 2,578.79
20₪ 5,157.58
30₪ 7,736.37
40₪ 10,315.16
50₪ 12,893.95
60₪ 15,472.74
70₪ 18,051.53
80₪ 20,630.32
90₪ 23,209.10
100₪ 25,787.89
110₪ 28,366.68
120₪ 30,945.47
130₪ 33,524.26
140₪ 36,103.05
150₪ 38,681.84

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

192 A

Maximum Drain Source Voltage

300 V

Series

HiperFET, Polar3

Package Type

SOT-227

Mounting Type

Screw Mount

Pin Count

4

Maximum Drain Source Resistance

14.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

1.5 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

25.07mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

38.23mm

Typical Gate Charge @ Vgs

268 nC @ 10 V

Height

9.6mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more