Infineon IRF7343PbF N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

RS Stock No.: 170-2265Brand: InfineonManufacturers Part No.: IRF7343TRPBF
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Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Series

IRF7343PbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω

Channel Mode

Depletion

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

2.3 nC @ 10 V, 24 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.5mm

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₪ 15,000.00

₪ 3.75 Each (On a Reel of 4000) (ex VAT)

₪ 17,550.00

₪ 4.388 Each (On a Reel of 4000) (inc. VAT)

Infineon IRF7343PbF N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

₪ 15,000.00

₪ 3.75 Each (On a Reel of 4000) (ex VAT)

₪ 17,550.00

₪ 4.388 Each (On a Reel of 4000) (inc. VAT)

Infineon IRF7343PbF N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 IRF7343TRPBF

Stock information temporarily unavailable.

Stock information temporarily unavailable.

quantityUnit pricePer Reel
4000 - 4000₪ 3.75₪ 15,000.00
8000 - 8000₪ 3.72₪ 14,880.00
12000+₪ 3.705₪ 14,820.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical documents

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Series

IRF7343PbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω

Channel Mode

Depletion

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Width

4mm

Length

5mm

Typical Gate Charge @ Vgs

2.3 nC @ 10 V, 24 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.5mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more