Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
75 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0045 Ω
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
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P.O.A.
N-Channel MOSFET, 170 A, 75 V, 3-Pin D2PAK Infineon IRF2907ZSTRLPBF
800
P.O.A.
N-Channel MOSFET, 170 A, 75 V, 3-Pin D2PAK Infineon IRF2907ZSTRLPBF
Stock information temporarily unavailable.
800
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
170 A
Maximum Drain Source Voltage
75 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.0045 Ω
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1