Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7.6 A
Maximum Drain Source Voltage
500 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.5 Ω
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si
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Stock information temporarily unavailable.
P.O.A.
N-Channel MOSFET, 7.6 A, 500 V, 3-Pin DPAK Infineon IPD50R500CEAUMA1
Select packaging type
Standard
20
P.O.A.
N-Channel MOSFET, 7.6 A, 500 V, 3-Pin DPAK Infineon IPD50R500CEAUMA1
Stock information temporarily unavailable.
Select packaging type
Standard
20
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
7.6 A
Maximum Drain Source Voltage
500 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.5 Ω
Maximum Gate Threshold Voltage
3.5V
Number of Elements per Chip
1
Transistor Material
Si