Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
IPD068N10N3 G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
7.47mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm
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₪ 14.991
Each (In a Pack of 10) (ex VAT)
₪ 17.539
Each (In a Pack of 10) (inc VAT)
10
₪ 14.991
Each (In a Pack of 10) (ex VAT)
₪ 17.539
Each (In a Pack of 10) (inc VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | ₪ 14.991 | ₪ 149.91 |
100 - 240 | ₪ 12.32 | ₪ 123.20 |
250 - 490 | ₪ 11.90 | ₪ 119.00 |
500 - 990 | ₪ 11.131 | ₪ 111.31 |
1000+ | ₪ 9.383 | ₪ 93.83 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
IPD068N10N3 G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
7.47mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm