Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
700 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
34.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Width
4.85mm
Transistor Material
Si
Series
CoolMOS CFD
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
16.15mm
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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₪ 28.276
Each (Supplied in a Tube) (ex VAT)
₪ 33.083
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
4
₪ 28.276
Each (Supplied in a Tube) (ex VAT)
₪ 33.083
Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
4
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
4 - 16 | ₪ 28.276 | ₪ 113.10 |
20 - 76 | ₪ 24.416 | ₪ 97.66 |
80 - 196 | ₪ 23.549 | ₪ 94.20 |
200 - 396 | ₪ 21.815 | ₪ 87.26 |
400+ | ₪ 21.018 | ₪ 84.07 |
Technical documents
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
22 A
Maximum Drain Source Voltage
700 V
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
34.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.65mm
Typical Gate Charge @ Vgs
86 nC @ 10 V
Width
4.85mm
Transistor Material
Si
Series
CoolMOS CFD
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Height
16.15mm
Product details
Infineon CoolMOS™ CFD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.